2SC3930 0.03a , 30v npn silicon epitaxial planar transistor elektronische bauelemente 08-mar-2011 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view a l c b d g h j f k e 1 2 3 1 2 3 ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free feature for high-frequency amplification complementary to 2sa1532 optimum for rf amplification of fm/am radios high transition frequency f t classification of h fe package information package mpq leadersize sot-323 3k 7? inch absolute maximum ratings ( t a = 25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 30 v collector to emitter voltage v ceo 20 v emitter to base voltage v ebo 5 v collector current ? continuous i c 30 ma collector power dissipation p c 150 mw junction, storage temperature t j , t stg 150, -55~150 electrical characteristics ( t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit testing condition collector-base breakdown voltage v (br)cbo 30 - - v i c =100 a, i e =0 collector-emitter breakdown voltage v (br)ceo 20 - - v i c =100 a, i b =0 emitter-base breakdown voltage v (br)ebo 5 - - v i e =100 a, i c =0 collector cut-off current i cbo - - 0.1 ? a v cb =10v, i e =0 emitter cut-off current i ebo - - 0.1 ? a v eb =5v, i c =0 dc current gain h fe 70 - 220 v ce =10v, i c =1ma transition frequency f t 150 - - mhz v ce =10v, i e =1ma, f=200mhz common emitter reverse transfer capacitance c re - - 1.5 pf v cb =10v, i c =1ma, f=10.7mhz noise figure nf - - 4 db v cb =10v, i c =1ma, f=5mhz reverse transfer impedance z rb - - 50 ? v cb =10v, i c =1ma, f=2mhz product-rank 2SC3930-vb 2SC3930-vc range 70~140 110~220 sot-323 ref. millimete r ref. millimete r min. max. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40
2SC3930 0.03a , 30v npn silicon epitaxial planar transistor elektronische bauelemente 08-mar-2011 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
2SC3930 0.03a , 30v npn silicon epitaxial planar transistor elektronische bauelemente 08-mar-2011 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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